1 Thermal oxidation of AlGaN nanowires for sub-250 nm deep ultraviolet photodetection, Xiaodong Zhang, Tao He, Wenbo Tang, Yongjian Ma, Xing Wei, Danhao Wang, Haochen Zhang, Haiding Sun, Yaming Fan, Yong Cai and Baoshun Zhang, Journal of Physics D: Applied Physics, Vol.53,495105, 2020.
2 Metalorganic Chemical Vapor Deposition Heteroepitaxial β-Ga2O3 and Black Phosphorus Pn Heterojunction for Solar-Blind Ultraviolet and Infrared Dual-Band Photodetector, Tao He, Chang Li, Xiaodong Zhang, Yongjian Ma, Xu Cao, Xinyao Shi, Chi Sun, Junshuai Li, Liang Song, Chunhong Zeng, Kai Zhang, Xinping Zhang, Baoshun Zhang, Physica Status Solidi A-Applications and Materials Science, 217, 1900861, 2020.
3 Controllable Ga catalyst deposition on GaN template and fabrication of ordered vertical β-Ga2O3 nanowire array, Xu Cao, Yanhui Xing, Junshuai Li, Xiaodong Zhang, Tao He, Li Zhang, Yongjian Ma, Kun Xu, Jiahao Zhao, Wenbo Tang, and Baoshun Zhang, Journal of Physics D: Applied Physics, Vol.53, No.305103. 2020.
4 Crystalline properties of ε-Ga2O3 film grown on c-sapphire by MOCVD and solar-blind ultraviolet photodetector, Xu Cao, Yanhui Xing, Jun Han, Junshuai Li, Tao He, Xiaodong Zhang, Jiahao Zhao, Baoshun Zhang, Materials Science in Semiconductor Processing, 4, 105532, November 2020.
5 Research of Nanoproe Structure of Ga2O3 film in MOCVD for improving the performance of UV photoresponse, Yanhui Xing, Yao Zhang, Jun Han, Xu Cao, Boyao Cui, Haixin Ma, Baoshun Zhang, Nanotechnology, vol.32, 095301, 2021.
6 Fabrication and application of flexible AlN piezoelectric film, jiahao Zhao , Jun Han, Yanhui Xing, Wenkui Lin, Lun Yu,Xu Cao, Zheming Wang, Xin Zhou, Xiaodong Zhang, Baoshun Zhang, Semiconductor Science and Technology, Vol.35, 035009, 2020.
7 Effect of fluorinated graphene insulator on AlGaN/GaN MIS-HEMTs as gate dielectric, Xiaoyu Ding, Liang Song, Tao He, Chi Sun, Yong Cai, Chunhong Zeng, Kai Zhang, Xiaodong Zhang, Xinping Zhang, Baoshun Zhang, Diamond and Related Materials, Vol.109, 108010, 2020.
8 Effect of U-shape trench etching process on electrical properties of GaN vertical trench metal-oxide- semiconductor field-effect transistor , 陈扶, 唐文昕, 于国浩, 张丽, 徐坤, 张宝顺, 物理学报, Vol. 69, No. 9, 098501,2020.
9 基于离子注入隔离的微缩化发光二极管阵列性能, 高承浩, 徐峰, 张丽, 赵德胜, 魏星, 车玲娟, 庄永漳, 张宝顺, 张晶, 物理学报, Vol.69, No. 2. 2020.
10 Ultraviolet-Infrared Dual-Color Photodetector Based on Vertical GaN Nanowire Array and Graphene, Chunhong Zeng, Wenkui Lin, Tao He，Yukun Zhao, Yuhua Sun, Qi Cui, Xuan Zhang, Shulong Lu, Xuemin Zhang, Yameng Xu, Mei Kong and Baoshun Zhang, Chinese Optical Letter, Vol. 18, 112501, 2020.
11 Elimination of Silicon Droplets Formation during 4H-SiC Epitaxial Growth by Chloride-Based CVD in a Vertical Hot-Wall Reactor, Chuangang Li, Tao Ju, Liguo Zhang, Xiang Kan, Xuan Zhang, Juan Qin, Baoshun Zhang, Zehong Zhang, Materials Science Forum, Vol. 1014, 3-7, 2020.
12 Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition, Fengfeng Shi, Jun Han, Yanhui Xing, Junshuai Li, Li Zhang, Tao He, Tao Li,Xuguang Deng, Xaiodong Zhang, Baoshun Zhang, Materials Letters , 237,105–108,2019.
13 Broadband Ultraviolet Photodetector Based on Vertical Ga2O3/GaN Nanowire Array with High Responsivity, Tao He, Xiaodong Zhang, Xiaoyu Ding, Chi Sun, Yukun Zhao, Qiang Yu, Jiqiang Ning, Rongxin Wang, Guohao Yu, Shulong Lu, Kai Zhang, Xinping Zhang, Baoshun Zhang, Advanced optical materials, Vol. 7.1801563, 2019.
14 Monolithic integration of enhancement/depletion-mode high electron mobility transistors using hydrogen plasma treatment, Ronghui Hao, Chi Sun, Bin Fang, Ning Xu, Zhifu Tao, Hui Zhang, Xing Wei, Wenkui Lin, Xiaodong Zhang, Guohao Yu, Zhongming Zeng, Yong Cai, Xinping Zhang, and Baoshun Zhang, Applied Physics Express, Vol.12/036502, 2019.
15 Normally-off p-GaN/AlGaN/GaN high-electron-mobility transistors using oxygen plasma treatment, Chi Sun, Ronghui Hao, Ning Xu, Tao He, Fengfeng Shi, Guohao Yu, Liang Song, Zengli Huang,Rong Huang, Yanfei Zhao, Rongxin Wang, Yong Cai, Baoshun Zhang, Applied Physics Express, Vol.12/ 051001, 2019.
16 Optoelectronic platform and technology, Wen-hua SHI, Wei-ming LV, Tian-yu SUN, Bao-shun ZHANG, Frontiers of Information Technology & Electronic Engineering, Vol.20, No. 439-457 2019.
17 Enhancement mode AlGaN/GaN HEMTs by fluorine ion thermal diffusion with high Vth stability, "Feiyu Shen, Ronghui Hao, Liang Song, Fu Chen, Guohao Yu, Xiaodong Zhang,Yaming Fan, Fujiang Lin, Yong Cai, Baoshun Zhang, Applied Physics Express, Vol.12, No. 6, 2019.
18 Enhanced performance of vertical-structured InGaN micro-pixelated light-emitting diode array fabricated using ion implantation process, Feng Xu, Chenghao Gao,Yaming Fan, Peng Chen, Baoshun Zhang, Optics letters, Vol. 44, No. 18,4562-4565, 2019.
19 Enhancement-mode n-GaN gate p-channel heterostructure field effect transistors based on GaN/AlGaN 2D hole gas, Fu Chen, Ronghui Hao, Guohao Yu, X. D. Zhang, Liang Song, Jinyan Wang, Yong Cai, and Baoshun Zhang, Applied Physics Letters, 115, 112103, 2019.
20 Normally-off p-GaN/AlGaN/ GaN high electron mobility transistors using hydrogen plasma treatment, Ronghui Hao, Kai Fu, Guohao Yu, Weiyi Li, Jie Yuan, Liang Song, Zhili Zhang, Shichuang Sun, Xiajun Li, Yong Cai, Xinping Zhang, Baoshun Zhang, Applied Physics Letters, 109, 152106.2016.
21 Gate leakage mechanisms in normally off p-GaN/AlGaN/GaN high electron mobility transistors, Ning Xu, Ronghui Hao, Fu Chen, Xiaodong Zhang, Hui Zhang, Peipei Zhang, Xiaoyu Ding, Liang Song, GuohaoYu, Kai Cheng, Yong Cai, Baoshun Zhang, Applied Physics Letters, 113/152104,2018.10.
22 Solar-blind ultraviolet photodetector based on graphene/vertical Ga2O3 nanowire array heterojunction, He, Tao, Zhao, Yukun, Zhang, Xiaodong, Lin, Wenkui, Fu, Kai, Sun, Chi, Shi, Fengfeng, Ding, Xiaoyu, Yu, Guohao, Zhang, Kai, Lu, Shulong, Zhang, Xinping, Baoshun Zhang, Nanophotonics, 7/9, 1557. 2018.
23 1000V p-GaN混合阳极AlGaN/GaN二极管, 唐文昕, 郝荣晖, 陈扶, 于国浩, 张宝顺, 物理学报, vol. 67, 198501, 2018.
24 Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs, Liang Song, Kai Fu, Jie Zhao, Guohao Yu, Ronghui Hao, Xiaodong Zhang, Fu Chen, Yaming Fan, Yong Cai, and Baoshun Zhang, AIP ADVANCES,vol.8, 035213, 2018.
25 Degradation of AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors under off-state electrical stress, Liang Song, Kai Fu, Jie Zhao, Guohao Yu, Ronghui Hao, Yaming Fan, Yong Cai, and Baoshun Zhang, Journal of Vacuum Science & Technology B , vol.36, 042201, 2018.
26 Fabrication technology of Si face and m face on 4H-SiC (0001) epi-layer based on molten KOH etching, Wen-kui Lin#, Chun-hong Zeng, Yu-hua Sun, Xuan Zhang, Zhe Li, Tao-tao Yang, Tao Ju, Baoshun Zhang, Proceedings Volume 10697, Fourth Seminar on Novel Optoelectronic Detection Technology and Application, 106974E. 2018
27 紫外-红外双色集成探测器的发展与现状, 李淑萍，何涛，付凯，于国浩，张晓东，熊敏，张宝顺, 红外技术, vol.43, No.11, 1033-1041, 2018.
28 复合栅介质对AlGaN/GaN MISHEMT器件性能的影响, 张佩佩、张辉、张晓东、于国浩、徐宁、宋亮、董志华、张宝顺, 半导体技术, vol.43, NO.11, 815-822, 2018.
29 An Al0.25Ga0.75N/GaN Lateral Field Emission Device with a Nano Void Channel, 赵德胜，刘冉，付凯，于国浩，蔡勇，黄宏娟，王逸群，孙润光，张宝顺, CHIN. PHYS. LETT., Vol. 35, No. 3, 038103, 2018.
30 Breakdown Enhancement and Current Collapse Suppression by High-Resistivity GaN Cap Layer in Normally-Off AlGaN/GaN HEMTs, Ronghui Hao , Weiyi Li, Kai Fu, Guohao Yu, Liang Song, Jie Yuan, Junshuai Li, Xuguang Deng, Xiaodong Zhang, Qi Zhou, Yaming Fan, Wenhua Shi, Yong Cai, Xinping Zhang, Baoshun Zhang, IEEE Electron Device Letters, vol.38, NO.11, 1567-1570, 2017
31 High-resistivity Unintentionally Carbon-doped GaN Layers with Nitrogen as Nucleation Layer Carrier Gas Grown by Metal-organic Chemical Vapor Deposition, Fu Chen,Shichuang Sun,Xuguang Deng, Kai Fu, Guohao Yu, Liang Song, Ronghui Hao, Yaming Fan, Yong Cai and Baoshun Zhang, AIP Advances, vol.7, 125018, 2017.
32 Mechanism of leakage of ion-implantation isolated AlGaN/GaN MIS-high electron mobility transistors on Si substrate, Zhili Zhang, Liang Song, Weiyi Li, Kai Fu, Guohao Yu, Xiaodong Zhang, Yaming Fan, Xuguang Deng, Shuiming Li, Shichuang Sun,Xiajun Li, Jie Yuan, Qian Sun, Zhihua Dong, Yong Cai, Baoshun Zhang, Solid-State Electronics, vol.134, 39-45, 2017.
33 Interface Si donor control to improve dynamic performance of AlGaN/GaN MIS-HEMTs., Liang Song,Kai Fu,Zhili Zhang, Shichuang Sun,Weiyi Li,Guohao Yu,Ronghui Hao,Yaming Fan,Wenhua Shi, Yong Cai, Baoshun Zhang, AIP ADVANCES, vol.7, NO.12, 125023/7, 2017.
34 Design and simulation of a novel E-mode GaN MIS-HEMT based on a cascode connection for suppression of electric field under gate and improvement of reliability, Weiyi Li, Zhili Zhang1, Kai Fu1, Guohao Yu1, Xiaodong Zhang, Shichuang Sun, Liang Song1, Ronghui Hao, Yaming Fan, Yong Cai, Baoshun Zhang, Journal of Semiconductors, vol.38, NO.7: p. 074001/7.
35 Fabrication of Normally-Off AlGaN/GaN MIS-High Electron Mobility Transistors Using Photo-Electrochemical Gate Recess Etching in Ionic Liquid, Zhili Zhang, Shuangjiao Qin, Kai Fu, Guohao Yu, Weiyi Li, Xiaodong Zhang, Shichuang Sun, Liang Song, Shuiming Li, Ronghui Hao, Yaming Fan, Qian Sun, Gebo Pan, Yong Cai, Baoshun Zhang, Applied Physics Express, vol.9, 084102.2016