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序号
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名 称
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时 间
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获奖名称等级、
鉴定单位、刊物名称（学术论文标明卷、期、页码以及收录情况）
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1
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1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al2O3/SiO2 Bi-Layer Passivation at 2 GHz
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2021
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IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, vol.9, pp:160-164
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2
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Fabrication of low stress GaN-on-diamond structure via dual-sided diamond film deposition
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2021
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JOURNAL OF MATERIALS SCIENCE, vol.56, No.11, pp:6903-6911
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3
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1.26 W/mm Output Power Density at 10 GHz for Si3N4 Passivated H-Terminated Diamond MOSFETs
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2021
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IEEE TRANSACTIONS ON ELECTRON DEVICES, vol.68, No.10, pp:5068-5072
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4
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High performance wafer scale flexible InP double heterogeneous bipolar transistors
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2021
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SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.36, No.3, pp:03LT02
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5
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High-spectra purity photon generation from a dual-interferometer-coupled silicon microring
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2020
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OPTICS LETTERS, vol.45, No.1, pp:73-76
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6
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Bright photon-pair source based on a silicon dual-Mach-Zehnder microring
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2020
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SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, vol.63, No.2, pp:220362
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7
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H-terminated diamond RF MOSFETs with AlOx/SiNx bi-layer passivation and selectively etched T-shaped gates
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2020
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DIAMOND AND RELATED MATERIALS, vol.110, pp:108160
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8
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Enhancement of diamond seeding on aluminum nitride dielectric by electrostatic adsorption for GaN-on-diamond preparation
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2020
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JOURNAL OF MATERIALS RESEARCH, vol.35, No.5, pp:508-515
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9
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High frequency H-diamond MISFET with output power density of 182 mW/mm at 10 GHz
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2019
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APPLIED PHYSICS LETTERS, vol.115, No.19, pp:192102
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10
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Steep Subthreshold Swing in GaN Negative Capacitance Field-Effect Transistors
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2019
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IEEE TRANSACTIONS ON ELECTRON DEVICES, vol.66, No.10, pp:4148-4150
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11
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The influence of dielectric layer on the thermal boundary resistance of GaN-on-diamond substrate
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2019
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SURFACE AND INTERFACE ANALYSIS, vol.51, No.7, pp:783-790
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12
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CL-TWE Mach-Zehnder electro-optic modulator based on InP-MQW optical waveguides
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2019
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CHINESE OPTICS LETTERS, vol.17, No.6, pp:61301
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13
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Characterize and optimize the four-wave mixing in dual-interferometer coupled silicon microrings
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2019
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CHINESE PHYSICS B, vol.28, No.10, pp:104211
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14
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Breakdown enhancement of diamond Schottky barrier diodes using boron implanted edge terminations
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2019
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DIAMOND AND RELATED MATERIALS, vol.92, pp:146-149
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15
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A High Frequency Hydrogen-Terminated Diamond MISFET With f(T)/f(max) of 70/80 GHz
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2018
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IEEE ELECTRON DEVICE LETTERS, vol.39, No.9, pp:1373-1376
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16
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Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier
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2018
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IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, vol.6, No.1, pp:360-364
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17
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Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs
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2018
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CHINESE PHYSICS B, vol.27, No.4, pp:47307
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18
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A 16 GS/s 3-Bit DAC Core in GaN HEMT Technology
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2018
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PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol.215, No.7, pp:1700790
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19
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High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications
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2017
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IEEE ELECTRON DEVICE LETTERS, vol.38, No.5, pp:615-618
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20
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3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology
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2017
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IEEE ELECTRON DEVICE LETTERS, vol.38, No.10, pp:1417-1420
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21
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Thermal simulation of high power GaN-on-diamond substrates for HEMT applications
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2017
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DIAMOND AND RELATED MATERIALS, vol.73, pp:260-266
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22
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Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs
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2017
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IEEE TRANSACTIONS ON ELECTRON DEVICES, vol.64, No.8, pp:3139-3144
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23
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High-performance enhancement-mode Al2O3/InAlGaN/GaN MOS high-electron mobility transistors with a self-aligned gate recessing technology
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2017
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APPLIED PHYSICS EXPRESS, vol.10, No.2, pp:24101
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24
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Quaternary InAlGaN barrier high-electron-mobility transistors with f(max) > 400 GHz
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2017
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APPLIED PHYSICS EXPRESS, vol.10, No.11, pp:114101
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25
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Heterogenous Integration of III-V MMIC and Si CMOS
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2017
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2017 IEEE Electrical Design of Advanced Packaging & Systems (EDAPS) Symposium
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26
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碳基射频电子器件研究进展
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2020
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固体电子学研究与进展, vol.40, No.2, pp:94-103
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