序号
|
名 称
|
时 间
|
获奖名称等级、
鉴定单位、刊物名称(学术论文标明卷、期、页码以及收录情况)
|
1
|
1 W/mm Output Power Density for H-Terminated Diamond MOSFETs With Al2O3/SiO2 Bi-Layer Passivation at 2 GHz
|
2021
|
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, vol.9, pp:160-164
|
2
|
Fabrication of low stress GaN-on-diamond structure via dual-sided diamond film deposition
|
2021
|
JOURNAL OF MATERIALS SCIENCE, vol.56, No.11, pp:6903-6911
|
3
|
1.26 W/mm Output Power Density at 10 GHz for Si3N4 Passivated H-Terminated Diamond MOSFETs
|
2021
|
IEEE TRANSACTIONS ON ELECTRON DEVICES, vol.68, No.10, pp:5068-5072
|
4
|
High performance wafer scale flexible InP double heterogeneous bipolar transistors
|
2021
|
SEMICONDUCTOR SCIENCE AND TECHNOLOGY, vol.36, No.3, pp:03LT02
|
5
|
High-spectra purity photon generation from a dual-interferometer-coupled silicon microring
|
2020
|
OPTICS LETTERS, vol.45, No.1, pp:73-76
|
6
|
Bright photon-pair source based on a silicon dual-Mach-Zehnder microring
|
2020
|
SCIENCE CHINA-PHYSICS MECHANICS & ASTRONOMY, vol.63, No.2, pp:220362
|
7
|
H-terminated diamond RF MOSFETs with AlOx/SiNx bi-layer passivation and selectively etched T-shaped gates
|
2020
|
DIAMOND AND RELATED MATERIALS, vol.110, pp:108160
|
8
|
Enhancement of diamond seeding on aluminum nitride dielectric by electrostatic adsorption for GaN-on-diamond preparation
|
2020
|
JOURNAL OF MATERIALS RESEARCH, vol.35, No.5, pp:508-515
|
9
|
High frequency H-diamond MISFET with output power density of 182 mW/mm at 10 GHz
|
2019
|
APPLIED PHYSICS LETTERS, vol.115, No.19, pp:192102
|
10
|
Steep Subthreshold Swing in GaN Negative Capacitance Field-Effect Transistors
|
2019
|
IEEE TRANSACTIONS ON ELECTRON DEVICES, vol.66, No.10, pp:4148-4150
|
11
|
The influence of dielectric layer on the thermal boundary resistance of GaN-on-diamond substrate
|
2019
|
SURFACE AND INTERFACE ANALYSIS, vol.51, No.7, pp:783-790
|
12
|
CL-TWE Mach-Zehnder electro-optic modulator based on InP-MQW optical waveguides
|
2019
|
CHINESE OPTICS LETTERS, vol.17, No.6, pp:61301
|
13
|
Characterize and optimize the four-wave mixing in dual-interferometer coupled silicon microrings
|
2019
|
CHINESE PHYSICS B, vol.28, No.10, pp:104211
|
14
|
Breakdown enhancement of diamond Schottky barrier diodes using boron implanted edge terminations
|
2019
|
DIAMOND AND RELATED MATERIALS, vol.92, pp:146-149
|
15
|
A High Frequency Hydrogen-Terminated Diamond MISFET With f(T)/f(max) of 70/80 GHz
|
2018
|
IEEE ELECTRON DEVICE LETTERS, vol.39, No.9, pp:1373-1376
|
16
|
Improvement of Power Performance of GaN HEMT by Using Quaternary InAlGaN Barrier
|
2018
|
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY, vol.6, No.1, pp:360-364
|
17
|
Influence of fin architectures on linearity characteristics of AlGaN/GaNFinFETs
|
2018
|
CHINESE PHYSICS B, vol.27, No.4, pp:47307
|
18
|
A 16 GS/s 3-Bit DAC Core in GaN HEMT Technology
|
2018
|
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, vol.215, No.7, pp:1700790
|
19
|
High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications
|
2017
|
IEEE ELECTRON DEVICE LETTERS, vol.38, No.5, pp:615-618
|
20
|
3-inch GaN-on-Diamond HEMTs With Device-First Transfer Technology
|
2017
|
IEEE ELECTRON DEVICE LETTERS, vol.38, No.10, pp:1417-1420
|
21
|
Thermal simulation of high power GaN-on-diamond substrates for HEMT applications
|
2017
|
DIAMOND AND RELATED MATERIALS, vol.73, pp:260-266
|
22
|
Positive Shift in Threshold Voltage Induced by CuO and NiOx Gate in AlGaN/GaN HEMTs
|
2017
|
IEEE TRANSACTIONS ON ELECTRON DEVICES, vol.64, No.8, pp:3139-3144
|
23
|
High-performance enhancement-mode Al2O3/InAlGaN/GaN MOS high-electron mobility transistors with a self-aligned gate recessing technology
|
2017
|
APPLIED PHYSICS EXPRESS, vol.10, No.2, pp:24101
|
24
|
Quaternary InAlGaN barrier high-electron-mobility transistors with f(max) > 400 GHz
|
2017
|
APPLIED PHYSICS EXPRESS, vol.10, No.11, pp:114101
|
25
|
Heterogenous Integration of III-V MMIC and Si CMOS
|
2017
|
2017 IEEE Electrical Design of Advanced Packaging & Systems (EDAPS) Symposium
|
26
|
碳基射频电子器件研究进展
|
2020
|
固体电子学研究与进展, vol.40, No.2, pp:94-103
|