目前已发表SCI和EI学术论文26余篇,其中以第一作者身份在相关领域国际顶级期刊IEEE Trans.和Letters上发表论文10篇,五年内论文被引用273次,单篇最高他引次数为52次,所发表成果两次被国际权威半导体期刊《Semiconductor Today》专题重点报道,以南京理工大学为第一单位首次在集成电路领域高水平会议ASSCC2023上发表论文;担任2020 IEEE亚洲固态微波电路会议的分会主席。
十篇代表作如下:
(1) W. Wu, Q. Chen, J. Zhang, T. Huang, D. Fang, Time Modulated Array Antennas: A Review, Electromagnetic Science 2, 1-19, 2024
(2) J. Jin, Z. Wan, H. Tao, T. Huang*, W. Wu, A Current-Reused Ultralow-Power IoT LNA With a Robust Linearization Technique, IEEE Microwave and Wireless Technology Letters, 2023
(3) H. Cao, T. Huang*, X. Liu, H. Wang, J. Jin and W. Wu, A 5.2GHz Trifilar Transformer-Based Class-F23 Noise Circulating VCO with FoM of 192.6 dBc/Hz," 2023 IEEE Asian Solid-State Circuits Conference (A-SSCC), 2023
(4) H. Cao, C. Hu, R. Guo, X. Wu, Y. Wang, F. Ge, S. Jin, C. Wang, H. Shen, H Tao, T. Huang*, W. Wu, A 28 GHz fully integrated GaN enhanced single‐sideband time‐modulated MMIC for phased array system, Microwave and Optical Technology Letters 65 (9), 2543-2548, 2023
(5) Y. Wang, T. Huang*, S. Jin, C. Wang, D. Ma, H. Shen, C. Li, Y. Li, W. Wu, A self-biased GaN LNA with 30 dB gain and 21 dBm P1dB for 5G communications, International Journal of Microwave and Wireless Technologies 15 (4), 547-553, 2023
(6) D. Ma, K. Zhou, H. Xie, T. Huang*, W. Wu, Compact or wide-stopband SIW diplexers with high intrinsic isolations based on orthogonal dual modes, IEEE Transactions on Circuits and Systems II: Express Briefs 70 (1), 71-75, 2022
(7) H. Tao, J. Wang, Y. Wang, D. Ma, H. Cao, W. Wu, T. Huang*, High-Power Ka/Ku Dual-Wideband GaN Power Amplifier with High Input Isolation and Transformer-Combined Load Design, IEEE Microwave and Wireless Components Letters, 2020
(8) Y. Wang, X. Shang, N. Ridler, M. Naftaly, A. Dimitriadis, T. Huang*, W. Wu, Material measurements using VNA-based material characterization kits subject to thru-reflect-line calibration, IEEE Transactions on Terahertz Science and Technology 10 (5), 466-473, 2020
(9) T. Huang*, O Axelsson, J Bergsten, M Thorsell, N Rorsman, Impact of AlGaN/GaN Interface and Passivation on the Robustness of Low-Noise Amplifiers, IEEE Transactions on Electron Devices, 2020
(10) T. Huang*, O Axelsson, J Bergsten, M Thorsell, N Rorsman, Achieving low-recovery time in AlGaN/GaN HEMTs with AlN interlayer under low-noise amplifiers operation, IEEE Electron Device Letters, 2017